Electronic Properties of a Semiconductor Superlattice : II. Low Temperature Mobility Perpendicular to the Superlattice
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概要
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Low temperature mobilities parallel to the layers of a heavily doped n-typeGaAs-Gaj =.A1,As superlattice are calculated as a function of carrier concemctra-tions. Assumed scattering mechanisms are Coulomb scatteri??g from doxtor ionsand surface roughness scatteriuag at the interface. The subbamtd structure iut thepresextce of the bautd bendimtg is calculated by the variational nvethod. The surfaceroughness scattering is shown to be relatively uxtimportamtt a?td the Coulombscattering is dominant. The mobility in the naodulatiout doping case becomesnearly one order of magnitude larger thaxa that in the uniform doping case inagreement with recent experimneutts. The band bending effect is inaportattt in themodulation doping case and reduce the mobility at large carrier comccentrations.The intersubbaxtd scattering greatly t'educes the ntobility when electrons occupyhigher subbands.
- 社団法人日本物理学会の論文
- 1980-03-15
著者
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Ando Tsuneya
Institute For Solic State Physics University Of Tokyo
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Mori Shojiro
Department Of Physics University Of Tokyo
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