Line Width of Inter-Subband Absorption in Inversion Layers:Scattering from Charged Ions
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The broadening of the inter-subband absorption is calculated in space-chargelayers on a Si surface. Scatterers are assumed to be dominated by charged tonsat the Si-Sin. interface. Among two different contributions to the broadening,the intra-subband process shows a drastic dependence on the strength of thedepletion field, while dependence is smaller for the infer-sttbband process. Theresults explain recent experiments in accumulation layers on the Si (100) surfacewhere extra Na" tons are intentionally introduced at the interface.
- 社団法人日本物理学会の論文
- 1985-07-15
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