Electronic Properties of a Semiconductor Superlattice. : I. Self-Consistent Calculation of Subband Structure and Optical Spectra

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The subband structure of a heavily doped n-type GaAs-Ga. .Al.As super-lattice is calculated. A band bending effect caused by charge transfer from theGa. -.Al.As to GaAs layers is taken into account self-consistently in the Hartreeapproximation. When the wavefunction along the superlattice direction is ratherlocalized, the band bending effect is crucial especially in the case of modulationdoping where only the Ga. ,Al.As layer is heavily doped and the GaAs layerremains undoped. Calculated results are in good agreement with recent experi-ments. Many-body effects such as exchange and correlation are studied in thedensity-functional formulation, but shown to be unimportant. Intersubbandoptical absorptions are also investigated. A local field effect can shift resonanceenergies to higher energy side considerably.
社団法人日本物理学会の論文
1979-11-15