Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum Wells
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The subband structure of a two-dimensional hole system at GaAs/AIGaAsheterojunctions and quantum welts is calculated in the self-consistent Hartreeapproximation. The subband dispersion is shown to be quite nonparabolic andanisotropic. The cyclotron effective mass is strongly dependent on the holeconcentration. The spin splitting is extremely large due to the lack of inversionsymmetry at single heterojunctions. Light-scattering spectra are calculated forquantum welts and the agreement with experiments is excellent for systems withlow hole concentrations.
- 社団法人日本物理学会の論文
- 1985-04-15
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