Self-Consistent Results for a GaAs/Al_xGa_<1-x>As Heterojunciton.II.Low Temperature Mobility
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The low temperature mobility is calculated in a two-dimensional system at aGaAs/AN,Ga. ,As heterojunction. Scattering mechanisms are assumed to be theCoulomb scattering from ionized donors in the Al.Ga. ,As layer, interfaceroughness, and scattering caused by alloy disorder present in the Al.Ga. ,Aslayer. The calculated mobility for the Coulomb scattering explains recent ex-perimental results. The interface roughness and the alloy scattering can play arole at high electron concentrations ( - 10" cm ").
- 社団法人日本物理学会の論文
- 1982-12-15
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