環境安全に配慮した電子材料開発への取り組み

概要

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Choice of a technology clearly has to depend on its ability not only to fulfill material requirements but also environmental safety criteria. Therefore, the possibility of environmental impact raise questions related to safety and in near future, tolerable amount of hazardous materials, especially for crystal growth of compound semiconductor. Although molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have become the most important and well established production tools and are expected to play an even larger role in device fabrication, much care has to be taken on handling and disposal of the hazardous materials. In contract, gas source MBE (GSMBE) is a much more environmentally beneficial technology and safety requirements can be met more easily than MBE and MOCVD. High throughput epitaxial wafer production is demonstrated by using a newly designed multi-wafer GSMBE apparatus. We have obtained excellent results in uniformity, throughput, cost performance, electrical performance and few hazards for operation. These results confer the promising way to overcome of MBE and MOCVD based growth technology.
宇部工業高等専門学校の論文