<論文>CdCl_2処理温度条件およびCd/Te組成比の違いによるCdTe薄膜太陽電池の深い準位への影響 (電子情報学部設立記念号)
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概要
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The effect of CdCl_2 annealing conditions of glass/ITO/n-CdS/p-CdTe solar cell structures on the deep level density and carrier lifetime of the p-CdTe layer and correlation with the solar cell conversion efficiency was investigated. CdCl_2 treatment was carried out at temperatures ranging from 370 to 460℃ for 15min. A clear correlation between trap density, carrier lifetime, conversion efficiency and the CdCl_2 annealing conditions was observed. Un-annealed structures had a conversion efficiency of 5.7%, hole trap energy of Ev+0.42eV, hole trap density of 8.71×(10)^<14>(cm)^<-3>, and decay lifetime of 0.15μs. The optimum CdCl_2 annealing temperature was found to be 415℃ for structures grown at a substrate temperature of 595℃, where the conversion efficiency, hole trap energy, hole trap density, decay lifetime were 13.4%, Ev+0.44eV, 8.10×(10)^<12>(cm)^<-3> and 0.40μs, respectively. There was no clear correlation between trap density, conversion efficiency and Cd-Te ratio of CdTe thin films.
- 東海大学の論文
- 2002-03-31
著者
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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小林 謙作
東海大学工学研究科
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岡本 保
東京工業大学理工学研究科
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山田 明
東京工業大学工学部電気電子工学科
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山田 明[他]
東京工業大学工学部電気電子工学科
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