Characterization of Crystal Quality of Bi_<12>GeO_<20> Films Deposited by Using RF Magnetron Sputtering
スポンサーリンク
概要
- 論文の詳細を見る
The photorefractive single crystal bulk samples have been used for image recording. Films of Bi_<12>GeO_<20> which belongs to a bismuth sillenite compound were deposited by using RF magnetron sputtering. Thin films have merits in device integration and mass production. The process condition to obtain a good crystalline film was studied. The film with crystalline phase only was obtained at the substrate temperatures above 200℃.
- 東海大学の論文
著者
-
SHIBUYA Takehisa
Department of Electro-Photo Optics, School of Engineering, Tokai University
-
Wakaki Moriaki
Department Of Optical Imaging And Science & Technology Tokai University
-
Wakaki Moriaki
Department O Electro-photo-optics Engineering Tokai University
-
Yokota Hideshi
Department Of Electro Photo Optics
-
Shibuya Takehisa
Department Of Optical Imaging And Science & Technology Tokai University
-
KATSUMA Hidetoshi
School of Science, Tama Art Univ.
-
MUROTANI Hiroshi
Course of Electro-photo Optics
-
ISSHIN Kenji
Course of Electro Photo Optics
-
KATSUMA Hidetoshi
Department of Physics, Tama Art University
-
ISSHIN Kenji
Department Electro-Photo-Optics, Tokai University
-
Isshin Kenji
Department Electro-photo-optics Tokai University
-
Murotani Hiroshi
Department Electro-photo-optics Tokai University
-
Murotani Hiroshi
Course Of Electro Photo Optics
-
Katsuma Hidetoshi
School Of Science Tama Art Univ.
-
Shibuya Takehisa
Department Of Applied Science Optics And Photonics School Of Engineering Tokai University
関連論文
- Achievement of 10 keV Central Electron Temperatures by ECH in LHD
- Prevention of Reversed Flow in Gas Divertor with High Vacuum Chamber
- Analysis of Radial Electric Field Bifurcation in LHD Based on Neoclassical Transport Theory
- Characteristics of Hydrogen Negative Ions in Sheet Plasma
- Observation and Modeling of Molecular and Atomic Ions in Hydrogen Plasma
- ICRF加熱されたシートプラズマにおけるドップラー広がりによるイオン温度測定
- シート・プラズマ中のヘリウムイオン温度
- Transition of Edge Particle Transport in CHS
- Soft X-Ray Tomography of the m=2 Magnetic Island Structure in the JIPP T-II Tokamak
- 矩形自然循環ループにおける流れの不安定性 : 不安定領域に対する傾斜角度と冷却水温の影響
- Radiation Loss and Impurity Abundance during ICRF Heating in the JIPP T-IIU Tokamak
- Characteristics of the Detectors for Bolometric Measurement in Application to High Temperature Plasma
- Effect of In Situ Carbon Coating on ICRF-Heated Tokamak Plasmas Relating to Radiation Loss by Iron-Impurities in JIPP T-IIU
- Improvement in Plasma Heating at Higher-Density Region Using 106.4GHz Electron Cyclotron Heating System for Compact Helical System(Gases, plasmas, electric discharges, and beams)
- Observation of Mode-Converted Ion Bernstein Wave by an HCN Laser Scattering
- Observation of Mode-Converted Ion Bernstein Wave by an HCN Laser Scattering
- クラスタービーム法によるGeナノ構造薄膜のラマン分光評価
- In-Situ Ellipsometric Observations of Thickness Change in the Layers of Ag/a-As_2S_3 Film System with Progression of Photodoping
- Observation of the Initial Stage of Ion Assisted Deposition Films Using a Rotating-Analyzer Ellipsometer
- 回転移相子型偏光解析装置の測定精度に関する研究
- Four-detector photopolarimeter(FDP)の試作とその応用
- 金蒸着膜の成膜過程のエリプソメトリーによる観察
- Four Detector Polarimeter (FDP) の試作
- GaAsを用いたサブミリ波天文学用光伝導検出器の開発 : GaAsの超高純度液相エピタキシャル成長
- In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
- 電子冷却用n型Bi_2(SeTe)_3合金の遠赤外評価
- 超高解像力ホログラム材料の特性と評価
- 大口径低利得レーザのための新型不安定共振器
- 0.68μm帯InGaAlP可視半導体レーザの絶対周波数安定化
- Far-Infrared Reflectance Spectra of Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions
- Far-Infrared Reflectance Spectra of Heavily Doped p-GaAs for Various Hole Concentrations
- Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
- コヒーレント後方散乱における経路長の測定
- Research of Fundamental Factors for Weak Localization of Light
- 偏光解析法による蒸着薄膜の応力分布測定
- 近赤外ナノ秒パルスによるリング自己励起型位相共役鏡に関する研究
- ロジウムをドープしたBaTiO_3結晶のフォトリフラクティブ効果
- BaTiO_3結晶を用いた近赤外光による2光波混合
- 物理教育のためのホログラフィック多重記録実験
- Study on Nonlinear Photocurrent in Photoconductive Switch Using Femtosecond Pulse Laser
- Optical Characteristics of Al_2O_3 Ceramics with Highly Doped Cr
- 固体レーザー用焼結体ルビーの光学特性
- RF放電励起スラブ型Co_2レーザーの利得測定
- スラブ型CO_2レーザーの出力特性
- Characterization of Crystal Quality of Bi_GeO_ Films Deposited by Using RF Magnetron Sputtering
- 等温気相成長法によるHg_Cd_xTe層の作製及び光学的評価
- Optical Characterization of Hg_Cd_xTe Layers Grown by Isothermal Vapour Epitaxy
- CO_2レーザーアニールによるZnO薄膜光導波路の伝搬損失低減
- エキシマレーザー・ドライ・エッチング法を用いたZnO三次元光導波路の試作
- 画像記録のためのBi_GeO_膜の構造評価
- ITO(Indium Tin Oxide) 単結晶成長および電気・光学的性質の研究
- Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
- Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- 炭酸ガスレーザーによる光造形の基礎研究
- SNOMによるレーザー媒質Cr:Al_2O_3セラミックス中の光学活性Crの評価
- Peltier 冷却用材料n-BiSb, p-(BiSb)_2Te_3およびn-Bi_2(SeTe)_3の光学評価
- 赤外線検出器の最近の展望 : MCT(HgCdTe)検出器の進展
- フェムト秒(fs)レーザー光伝導スイッチにより発生した電気信号の伝搬の検討
- 光導電スイッチによるフェムト秒光パルスの自己相関計測
- 赤外線透過材料評価用赤外干渉計の基本性能評価
- マルチチャンネルフーリエ変換分光器を使用したラマン散乱スペクトル測定の応用研究
- 屈折率分布レンズの製作法に関する基礎研究
- レーザーあざ治療時に母斑より発生する音響衝撃波の基礎研究
- 回折格子型InGaAlP可視半導体レーザを用いたホログラム
- 0.68μm InGaAIP可視半導体レーザーの周波数安定化
- 表面形状のための半導体レーザによるホログラム計測
- 回折格子型InGaAIP可視半導体レーザの動作特性
- In-Situ Observation of Photodoping Process in a Chalcogenide Glass As_2S_3 by Ellipsometry
- Evaluation of Optically Active Cr Ion in Cr : Al_2O_3 Ceramics by SNOM
- Ellipsometric Study of Polished Glass Surfaces
- Adsorption of Water Vapour on a Cleavage Surface of Lithium Fluoride
- Extraction of Self-Diffraction Wave in Photorefractive Bi_SiO_ Crystals
- Polarization Properties of a Laser Output from a CO_2 Laser with Special Cavity Mirrors
- 特殊共振器を用いたC0_2レーザーの基本特性の評価
- Propagation Loss Mechanism in Optical Waveguides of ZnO Thin Film and Fabrication of 3-D Optical Waveguides
- Temperature Dependence of the Optical Surface Thicknesses of α-Methylnapthaleme and Carbontetrachloride
- Optical Characteristics of Al_2O_3 Ceramics Doped with Cr at High Concentrations Prepared by Extrusion Molding Process
- Far-Infrared Reflectivity Spectra of Non-Doped and Mg-Doped In_2O_3 Single Crystals
- Study of the Time Dependence of the Internal Stress of SiO_2 Optical Thin Films
- Ti:Al_2O_3セラミックスレーザー媒質の基礎研究
- 光表面実装技術に関する研究
- 送受信型光表面実装デバイス
- Infrared Reflectivity Spectrum and Lattice Vibration of Spinel-Type Compound HgIn_2S_4
- Temperature Dependence of the Optical Surface Thickness of Water
- GaAs:Se and GaAs:Te Photoconductive Detectors in 300 μm Region for Astronomical Observations
- Characteristics of Hydrogen Negative Ions in Sheet Plasma
- 光ヘテロダイン干渉法による複屈折自動測定