Optical Characteristics of Al_2O_3 Ceramics with Highly Doped Cr
スポンサーリンク
概要
- 論文の詳細を見る
Recently, the need for the solid-state laser is rapidly increased. With this laser, it is required to make a solidstate laser medium with high efficiency. Generally, a single crystal has been used for the solid-state laser medium. The single crystal laser medium is generally limited by its size and the amount of optically active elements. For the solution of these problems, it is proposed to use a poly-crystalline medium for the laser. As a fundamental study, the optical characteristics of Cr doped poly-crystalline Al_2O_3 (sintered ruby) ceramics were investigated. Poly-crystalline Al_2O_3 ceramics in which Cr was doped with high concentrations (2,3 and 4wt.%) was fabricated with an extrusion molding process following by a vacuum sintering method using Al_2O_3 and Cr_2O_3 powders. The crystal structure of the sintered ruby was confirmed with a powder X-ray diffraction method. The microstructure of the sintered ruby was observed by an optical microscope and a SEM. The dispersion of Cr ion within Al_2O_3 matrix was characterized with an EPMA. The optical properties of Cr ions were characterized by using photoluminescence and absorption spectra. It was found that a high concentration of Cr ions was optically activated and the fluorescence spectrum by Cr ions was nearly equal to that of a single crystal.
- 東海大学の論文
著者
-
Wakaki Moriaki
Department O Electro-photo-optics Engineering Tokai University
-
Kondo Yoshinori
Pilot Co. Ltd.
-
MUROTANI Hiroshi
Course of Electro-photo Optics
-
MITSUDA Takahiko
Course of Electro-photo Optics
-
Murotani Hiroshi
Course Of Electro Photo Optics
関連論文
- 矩形自然循環ループにおける流れの不安定性 : 不安定領域に対する傾斜角度と冷却水温の影響
- クラスタービーム法によるGeナノ構造薄膜のラマン分光評価
- In-Situ Ellipsometric Observations of Thickness Change in the Layers of Ag/a-As_2S_3 Film System with Progression of Photodoping
- GaAsを用いたサブミリ波天文学用光伝導検出器の開発 : GaAsの超高純度液相エピタキシャル成長
- In-Situ Observation of Photodoping Process by Infrared Attenuated Total Reflection Method
- 電子冷却用n型Bi_2(SeTe)_3合金の遠赤外評価
- Far-Infrared Reflectance Spectra of Al_xGa_As/GaAs Superlattices for Various Al Mole Fractions
- Far-Infrared Reflectance Spectra of Heavily Doped p-GaAs for Various Hole Concentrations
- Raman Scattering Determination of Free Carrier Concentration and Surface Depletion Layer in (100) p-GaAs Grown by Molecular-Beam Epitaxy
- コヒーレント後方散乱における経路長の測定
- Research of Fundamental Factors for Weak Localization of Light
- 物理教育のためのホログラフィック多重記録実験
- Study on Nonlinear Photocurrent in Photoconductive Switch Using Femtosecond Pulse Laser
- Optical Characteristics of Al_2O_3 Ceramics with Highly Doped Cr
- 固体レーザー用焼結体ルビーの光学特性
- Characterization of Crystal Quality of Bi_GeO_ Films Deposited by Using RF Magnetron Sputtering
- 等温気相成長法によるHg_Cd_xTe層の作製及び光学的評価
- Optical Characterization of Hg_Cd_xTe Layers Grown by Isothermal Vapour Epitaxy
- CO_2レーザーアニールによるZnO薄膜光導波路の伝搬損失低減
- エキシマレーザー・ドライ・エッチング法を用いたZnO三次元光導波路の試作
- 画像記録のためのBi_GeO_膜の構造評価
- ITO(Indium Tin Oxide) 単結晶成長および電気・光学的性質の研究
- Crystal Structure and Lattice Absorption of Partially-Inverse Spinel Compound MgIn_2S_4
- Optical and Electrical Properties of Inverse Spinel Compound MgIn_2S_4 : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
- 炭酸ガスレーザーによる光造形の基礎研究
- SNOMによるレーザー媒質Cr:Al_2O_3セラミックス中の光学活性Crの評価
- Peltier 冷却用材料n-BiSb, p-(BiSb)_2Te_3およびn-Bi_2(SeTe)_3の光学評価
- 赤外線検出器の最近の展望 : MCT(HgCdTe)検出器の進展
- フェムト秒(fs)レーザー光伝導スイッチにより発生した電気信号の伝搬の検討
- 光導電スイッチによるフェムト秒光パルスの自己相関計測
- 赤外線透過材料評価用赤外干渉計の基本性能評価
- マルチチャンネルフーリエ変換分光器を使用したラマン散乱スペクトル測定の応用研究
- 屈折率分布レンズの製作法に関する基礎研究
- レーザーあざ治療時に母斑より発生する音響衝撃波の基礎研究
- In-Situ Observation of Photodoping Process in a Chalcogenide Glass As_2S_3 by Ellipsometry
- Evaluation of Optically Active Cr Ion in Cr : Al_2O_3 Ceramics by SNOM
- Polarization Properties of a Laser Output from a CO_2 Laser with Special Cavity Mirrors
- 特殊共振器を用いたC0_2レーザーの基本特性の評価
- Propagation Loss Mechanism in Optical Waveguides of ZnO Thin Film and Fabrication of 3-D Optical Waveguides
- Optical Characteristics of Al_2O_3 Ceramics Doped with Cr at High Concentrations Prepared by Extrusion Molding Process
- Far-Infrared Reflectivity Spectra of Non-Doped and Mg-Doped In_2O_3 Single Crystals
- Ti:Al_2O_3セラミックスレーザー媒質の基礎研究
- Infrared Reflectivity Spectrum and Lattice Vibration of Spinel-Type Compound HgIn_2S_4
- GaAs:Se and GaAs:Te Photoconductive Detectors in 300 μm Region for Astronomical Observations