Chemical junction delineation of a specific site in Si devices
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概要
- 論文の詳細を見る
- 2004-06-01
著者
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Lee S‐y
Yonsei Univ. Seoul Kor
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Park Tae-su
Memory R&d Division Hynix Semiconductor Inc.
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Yang J‐m
Memory R&d Division Hynix Semiconductor Inc.
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Yang J‐m
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Park Ju-chul
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Tae-su
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Jong-pill
Memory Research And Development Division Hynix Semiconductor Inc.
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EO Hee-Joo
Memory Research and Development Division, Hynix Semiconductor Inc.
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KIM Won
Memory Research and Development Division, Hynix Semiconductor Inc.
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LEE Soun-Young
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Ju-chul
Analysis Team Memory R&d Division Hynix Semiconductor Inc.
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Eo Hee-joo
Memory Research And Development Division Hynix Semiconductor Inc.
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- Microstructures and Shear Strength of Interfaces between Sn-Zn Lead-free Solders and Au/Ni/Cu UBM
- Shear Strength in Solder Bump Joints for High Reliability Photodiode Packages
- Chemical junction delineation of a specific site in Si devices
- Analytical electron microscopy study of nanometre-scate oxide formed in contact-hole-bottom Si surfaces
- Transmission Electron Microscopy Study by Chemical Delineation in Si Devices
- Preparation and Characterization of RuO_x Thin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition
- Preparation and Characterization of RuOx Thin Films by Liquid Delivery Metalorganic Chemical Vapor Deposition