Transmission Electron Microscopy Study by Chemical Delineation in Si Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Lee S‐y
Yonsei Univ. Seoul Kor
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Back Tae-sun
Memory Research And Development Division Hynix Semiconductor Inc
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KIM Ho-Joung
Analysis Team, Memory R&D Division, Hynix Semiconductor Inc.
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LEE Soun-Young
Analysis Team, Memory R&D Division, Hynix Semiconductor Inc.
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Kim H‐j
Hyundai Display Technol. Inc. Ichon Kor
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Yang J‐m
Memory R&d Division Hynix Semiconductor Inc.
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Choi Jae-hoon
Device Physics Dept. Memory R&d Hyundai Electronics Industries Co. Ltd.
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Yang J‐m
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Ho-joung
Analysis Development Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lee Soun-young
Analysis Team Memory R&d Division Hynix Semiconductor Inc.
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Lee Seung-chul
Device Physics Dept. Memory R&d Hyundai Electronics Industries Co. Ltd.
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BACK Tae-Sun
Analysis Development Team, Memory R&D Division, Hyundai Electronics Industries Co. , Ltd.
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YANG Jun-Mo
Analysis Development Team, Memory R&D Division, Hyundai Electronics Industries Co. , Ltd.
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PARK Tae-Soo
Analysis Development Team, Memory R&D Division, Hyundai Electronics Industries Co. , Ltd.
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Park Tae-soo
Analysis Development Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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CHOI Jae-Hoon
Device Physics Dept. , Memory R&D, Hyundai Electronics Industries Co. , Ltd.
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- Effects of the Partial Pressure of Copper(I)Hexafluoroacetylacetonate Trimethylvinylsilane on the Chemical Vapor Deposition of Copper
- Effects of the Annealing in Ar and H_2/Ar Ambients on the Microstructure and the Electrical Resistivity of the Copper Film Prepared by Chemical Vapor Deposition
- Microstructures and Shear Strength of Interfaces between Sn-Zn Lead-free Solders and Au/Ni/Cu UBM
- Shear Strength in Solder Bump Joints for High Reliability Photodiode Packages
- Chemical junction delineation of a specific site in Si devices
- Analytical electron microscopy study of nanometre-scate oxide formed in contact-hole-bottom Si surfaces
- Transmission Electron Microscopy Study by Chemical Delineation in Si Devices