シリコン清浄表面上におけるTEOS分子の光分解過程の観察

概要

論文の詳細を見る
Tetraethoxysilane (TEOS : SiO4(C2H5)4) is widely used to fabricate silicon-dioxide insulator thin films in LSI device technologies. We have already reported that TEOS is photo-dissociated to result in oxide layer deposition at room temperature by a vacuum ultraviolet excimer lamp (λ=172 nm). In this paper, we have observed the initial stages of oxide layer deposition on silicon clean surfaces with the scanning tunneling microscope (STM) and time-of-flight (TOF) mass spectrometer. An argon excimer lamp (λ=126 nm) is used for the photo-chemical vapor deposition (CVD). TEOS molecules have been dissociated to be SiO4(C2H5)n(n=1, 2, 3) groups on the clean surfaces. The 126 nm photons dissociate the molecules or radicals to Si-Om(m=1, 3, 4) after 2 min. Finally, the Si-Om adsorbed molecules and Si atoms in the substrate are re-arranged to be a disorder structure by the photons.
社団法人電気学会の論文
2004-07-01