真空紫外エキシマランプによる銅薄膜の室温合成に関する研究

概要

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In the next generation of semiconductor devices, the width of the connection line areattempted to change from 0.25mm to less than 0.lmm. In such a narrow width, theelectro-migration will arise as long as employing the line made of Al. therefore, it is necessaryto employ Cu instead of Al for the material of the line, because the resistivity of Cu is smallerthan that of Al. in this research, using VUV-CVD (Vacuum Ultraviolet Chemical VaporDeposition) with four types of excimer lamps, Ar2* (λ=126nm), Xe2* (I72nm), KrCl* (222nm),and XeCl* (308nm), Cu thin film have been tried to deposit on the Si wafer at roomtemperature. (hfac)Cu(tmvs) and Cu(hfac)2 were used for precursors. As a result, the depositionof thin films was able to confirm with the observation of optical microscope. The content of Cuwas found to be increased with pressure in the chamber by XPS analysis. The maximum Cucontent of obtained films with Xe2* lamp irradiation was about 20% and 27% in the case ofusing (hfac)Cu(tmvs) and Cu(hfac)2, respectively. It was also found that Cu content in amolecule of the raw materials influenced Cu content of deposited films. So it was consideredthat the higher content of Cu in the film would be able to achieve by finding a new material,which contains fewer impurities compared to the precursor in the present work.
宮崎大学の論文