PLD法による結晶性チタン酸バリウム薄膜の作製

概要

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Abstract BaTiＯ3 thin films which are applicable as a capacitor material of semiconductors, such as high speed LSI, was made to deposit on Si(111) substrate by the PLD method. BaTiＯ3 target irradiated 18000 shots by the KrF excimer laser. The substrate temperature was varied from 20℃ to 550℃ under a vacuum of 2.0xl0(-5乗) Torr. The laser was focused with a lens of 80 mm focal length was used as a driving source of the laser ablation. The fluence of the laser on the target was approximately 5.0 J/cm(2乗）. Moreover, the another ultraviolet ray irradiated the substrate by the fluence of 100 mJ/cm（2乗） simultaneousiy. As a result, the crystallized thin film was successful deposited despite 250℃.This temperature is much lower than that in the conventional methods (665℃ without the irradiation of substrate) . The crystallinity of a thin film was improved as rising the substrate temperature. The SEM observation showed that the surface of the oriented films has regular sharped structure like the sguama. It is thought that if this effect is applied to the manufacturing of LSI, in industry, it will reduce the cost of manufacturing because of the low-temperature process.
宮崎大学の論文