PLD法における薄膜成長初期過程の観察

概要

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However the PLD method is widely used for fabrication of the various films, information of aninterface between the substrate and the film, which is a key for the quality of the film, has not been clarifiedwell. Because it is difficult to observe the interface through the deposited film, we have tried to observe theadhesion process of atoms which compose the film onto the substrate surface. We used the STM forobservation and the TOF analyzer for identification of the particles generated by PLD process. Si(111)surface which had been cleaned by the high temperature thermal etching method was used as a substrate. Inthis work, Fe was used as a target material in order to observe the simplified interaction between Fe and Siatoms intended to understand the initial stage of formation of β-FeSi2 films onto the Si substrate. ANd:YAG2ω(532 nm) used for PLD. As a result, we found that three kinds of sites where the Fe atoms werepreferably adsorbed. One is the centre of three comer holes of Si(lll) 7x7 structure. Another is theintermediate of the two corner holes, the other is beside of corner hole. In the former case, special shape ironcluster is adsorbed and latter two cases, ellipsoidal shape cluster is adsorbed.
2006-08-30