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United Microelectronics Corp. | 論文
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
- Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
- Shallow-Trench Isolation With Raised-Field-Oxide Structure
- A Novel Shallow Trench Isolation with Mint-Spacer Technology
- Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor : Semiconductors
- Investigation of Defect Reduction on Copper Chemical-Mechanical Polishing for Advanced BEOL Interconnections
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- A Decoupled Capacitance Measurement Technique for Characterization of Small-Geometry MOSFETs with Ultra-Thin Gate Oxides
- Analysis and Comparison of Polysilicon Contacted Ultra-Shallow Junction p^+ - and n^+ -poly Gate p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Two-Dimensional Simulation
- An Efficient Process-Evaluation Method for Ultra-Thin Gate Oxides
- Width Scaling and Layout Variation Effects on Dual Damascene Copper Interconnects Electromigration
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Copper Interconnect Electromigration Behavior in Various Structures and Precise Bimodal Fitting