An Efficient Process-Evaluation Method for Ultra-Thin Gate Oxides
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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LIU Chuan
United Microelectronics Corp.
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CHENG Tun-Jen
United Microelectronics Corp.
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FU K.
United Microelectronics Corp.
関連論文
- Mechanism of Threshold Voltage Shift (ΔV_) Caused by Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron pMOSFETs
- An Efficient Process-Evaluation Method for Ultra-Thin Gate Oxides