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ULSI Process Engineering Laboratory, Microelectronics Engineering Laboratory, TOSHIBA Corporation | 論文
- Improved Electron-Beam/Deep-Ultraviolet Intralevel Mix-and-Match Lithography with 100 nm Resolution
- Ru Electrode Deposited by Sputtering in Ar/O_2 Mixture Ambient
- Interfacial Layers between Si and Ru Films Deposited by Sputtering in Ar/O_2 Mixture Ambient
- A High-Performance 0.05 μm SOI MOS FET:Possibility of Velocity Overshoot
- A High Performance 0.05μm MOSFET with Thin SOI/Buried Oxide Structure
- Contamination Charging up Effect in a Variably Shaped Electron Beam Writer
- Electron Beam Calibration Method for Character Projection Exposure System EX-8D
- Patterning Accuracy Estimation of Electron Beam Direct-Writing System EX-8D
- Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
- Si-SiO_2 Interface Structures : Chemical Shifts in Si 2p Photoelectron Spectra : Surfaces, Interfaces and Films
- Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
- Silicon-Based Single-Electron-Tunneling Transistor Operated at 4.2 K
- High-Speed Electron Beam Data Conversion System Combining Hierarchical Operation with Parallel Processing
- Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium
- Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr) TiO_3 Capacitors for Future Dynamic Random Access Memories
- Homogeneous Heteroepitaxial NiSi_2 Formation on (100)Si
- Accuracy Evaluation of Representative Figure Method for Proximity Effect Correction
- Re-Oxidation of Thermally Nitrided Silicon Dioxide Thin Films
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor
- Character Projection EB Data Conversion System Combined with Throughput Analyzer