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ULSI Device Development Division, NEC Corporation | 論文
- Contrast Evaluation of the SCALPEL GHOST in 100 kV Electron Projection Lithography
- Luminescence Centers in Indium-Implanted Silicon
- Effect of Metals (Fe,Cu) on 8-nm-Thick Gate Oxide Reliability
- Ultra Shallow Junction Formation with High Process Controllability Using Optimized Rapid Thermal Anneal Process
- Dual Damascene Interconnect Technology for 130-nm-node Complementary Metal-Oxide-Semiconductor Devices Using Ladder-Oxide Film
- Lateral Diffusion Distance Measurement of 40-80 nm Junctions by Etching/TEM-Electron Energy Loss Spectroscopy Method
- A Precise SOI Film Thickness Measurement Including Gate Depletion and Quantum Effects
- A New High-Density Plasma Etching System Using A Dipole-Ring Magnet
- Gate Oxide Breakdown Phenomena in Magnetron Plasma
- Two-Dimensional Dopant Profiling of nMOSFETs with Shallow-Extensions Using Electrochemical Etching Technique
- Evaluation of Killer Particle Size in Deep Submicron Devices
- Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid
- Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process