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Toshiba Research And Development Center | 論文
- Highly Reliable SiO_2 Films Formed by UV-O_2 Oxidation
- Estimation of Diffusion Coefficient by Using Numerical Simulation of the Traveling Liquidus-zone MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity
- Numerical Investigation on Two-dimensionality in the Traveling Liquidus-zone MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growt
- In_Ga_As Plate Crystals Grown by the Traveling Liquidus-Zone (TLZ) MethodDetailed Results of This Period : Growth of Homogeneous Si_Ge_ Single Crystals by the Traveling Liquidus-Zone Method (Effects of microgravity environment on growt
- A Monolithic GaAs Linear Power Amplifier Operating with a Single Low 2.7-V Supply for 1.9-GHz Digital Mobile Communication Applications
- Refractory WN_x/W Self-Aligned Gate GaAs Power Metal-Semiconductor Field-Effect Transistor for 1.9-GHz Digital Mobile Communication System Operating with a Single Low-Voltage Supply
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- High-Pressure Transport Properties of the Superconducting Spin-Ladder System Sr_Ca_xCu_O_
- Single Low 2.4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1.9-GHz PHS Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Local Magnetic Properties of Underdoped La_Sr_χ CuO_4 Single Crystal Probed by Scanning Superconducting Quantum Interference Device Microscopy : Superconductors
- Electronic Structure in the Bulk State of Protonic Conductor CaZrO_3 by Resonant Soft-X-Ray Emission Spectroscopy : Electrical Properties of Condensed Matter
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Surface Acoustic Wave Device Applications to Consumer Electronics
- Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
- Growth and Properties of Li_2B_4O_7 Single Crystal for SAW Device Applications : V: PIZOELECTRIC VIBRATOR