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Toshiba Research And Development Center | 論文
- SAW Propagation Characteristics on Li_2B_4O_7 : Surface Acoustic Waves and Devices
- Etching Characteristics of n^+ Poly-Si and Al Employing a Magnetron Plasma
- High-Rate Reactive Ion Etching of SiO_2 Using a Magnetron Discharge
- Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Thermoelectric Power of Co/Cu Multilayer
- Annealing Properties of Defects in B^+- and F^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Fluorine-Related Defects in BF^+_2-Implanted Si Probed by Monoenergetic Positron Beams
- Effects of Recoil-Implanted Oxygen on Depth Profiles of Defects and Annealing Processes in P^+-Implanted Si Studied Using Monoenergetic Positron Beams
- Characterization of Metal/GaAs Interfaces by Monoenergetic Positron Beam
- Design of a New Optical Klystron for Developing Infrared Free Electron Lasers in the Storage Ring NIJI-IV
- Oxygen-Related Defects Introduced by As^+-Implantation through Cap Layers in Si Probed by Monoenergetic Positron Beams
- Defects in TiN Films Probed by Monoenergetic Positron Beams
- Vacancy-Type Defects in Ion-Implanted Diamonds Probed by Monoenergetic Positron Beams
- Defects in Heavily Phosphorus-Doped Si Epitaxial Films Probed by Monoenergetic Positron Beams
- Characterization of Hydrogenated Amorphous Silicon Films by a Pulsed Positron Beam
- Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
- Photoemission Study on Protonic Conductor CaZrO_3:Evidence of the Exchange Mechanism of Proton and Hole
- High F_ltmaxgt AlGaAs/GaAs HBTs with Pt/Ti/Pt/Au base contacts for DC to 40 GHz Broadband Amplifiers