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Tokyo Electron Ltd. | 論文
- Temperature-Measurement System Using Optical Fiber-Type Low-Coherence Interferometry for MultiLayered Substrate
- 1-GHz Bandwidth Digital Spectro-Correlator System for the Nobeyama Millimeter Array
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- Electrical characteristics of novel non-porous low-k dielectric fluorocarbon on Cu interconnects for 22nm generation and beyond (Special issue: Advanced metallization for ULSI applications)
- Production of Low-Electron-Temperature Electron Cyclotron Resonance Plasma Using Nitrogen Gas in the Mirror Magnetic Field
- High Mobility SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Epitaxially Grown on Si(100) Substrates with HfSiO2 High-$k$ Dielectric and Metal Gate
- High-Quality SiO2 Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
- Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma
- Robust Ultralow-k Dielectric (Fluorocarbon) Deposition by Microwave Plasma-Enhanced Chemical Vapor Deposition
- Integration Process Development for Improved Compatibility with Organic Non-Porous Ultralow-k Dielectric Fluorocarbon on Advanced Cu Interconnects
- Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization