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Taiwan Semiconductor Manufacturing Co., Ltd. | 論文
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Degradation of Flash Memory Using Drain-Avalanche Hot Electron (DAHE) Self-Convergence Operation Scheme
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
- Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
- Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
- A Unified Functional Reliability Model for N-channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub 2 nm Gate Oxide
- New Trap-Assisted Band-to-Band Tunneling Induced Gate Current Model for P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sub-3 nm Oxides
- Optimization of Program Threshold Window from Understanding of Novel Fast Charge Loss in Nonvolatile Memory
- Noncontact In-Line Monitoring of Ge Content and Thickness Variations of Epitaxial Si_Ge_x Layers on Si(100) Using Polychromator-Based Multiwavelength Micro-Raman Spectroscopy