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Semiconductor Leading Edge Technologies | 論文
- Effect of Purge Time on the Properties of HfO_2 Films Prepared by Atomic Layer Deposition(High-κ Gate Dielectrics)
- Suppression of Transient Enhanced Diffusion by Local-Oxidation-Silicon-Induced Stress
- Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress
- Analysis of Non-Uniform Boron Penetration of Nitrided Oxide in PMOSFETs Considering Two-Dimensional Nitrogen Distribution
- Boron Penetration Enhanced by Gate Ion Implantation Damage in PMOSFETs
- Hydrogen-Enhanced Boron Penetration in PMOS Devices during SiO_2 Chemical Vapor Deposition
- Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO_2 Chemical Vapor Deposition
- Thermal Instability of Poly-Si Gate Al_2O_3 MOSFETs
- Thermal Desorption Spectroscopy of (Ba, Sr)TiO_3 Thin Films Prepared by Chemical Vapor Deposition
- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
- Fast and Simplified Technique of Proximity Effect Correction for Ultra Large Scale Integrated Circuit Patterns in Electron-Beam Projection Lithography
- Evaluation of Performance of Proximity Effect Correction in Electron Projection Lithography
- Surface Morphologies and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition
- Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization
- Study of L_ dependence of 2-D carrier profile in N-FET by Scanning Tunneling Microscopy
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric