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Semiconductor Leading Edge Technologies | 論文
- KrF Resist Pattern Monitoring by Ellipsometry
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma
- Highly Accurate Proximity Effect Correction for 100 kV Electron Projection Lithography