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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- O-10 Analysis of Dynamic Behavior of the Positive Liquid Crystal in Fringe-Field Swiching (FFS) Device
- High-Resolution Spectroscopy of Rubidium Atoms
- Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
- Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
- Reflective Liquid Crystal Display Using a Non-Twist Half-Wave Cell
- Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
- Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
- Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
- Heterogeneous Particle Formation during Low Pressure Etching of Silicon Dioxide
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Analysis on Read-Out Signal in Magnetooptieal Disc Drive System
- Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals
- Barrier Metal Properties of Amorphous Tantalum Nitride Thin Films between Platinum and Silicon deposited using Remote Plasma Metal Organic Chemical Vapor Method
- Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
- The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems