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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process
- Evaluation of PECVD a-SiC:H as a Cu Diffusion Barrier Layer of Cu Dual Damascene Process
- Block and Codeword Interleaving Scheme for the High Density Digital Versatile Disc
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- In-Situ Doped CMOS Polysilicon Thin Film Transistors
- Polysilicon Thin Film Transistors with PN Junction Gate
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Optical Disc for Small Form Factor Optical Drive
- Experimental Results of 3-piece 0.4 mm Molded Substrate
- Experimental Results of Space Layer Thickness for Blue-Wavelength Dual-Layered Disc
- Thermally Optimum Structure for Overwriting Cyclability and Cross-Erase Characteristics
- Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
- Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
- Short Channel Effects in N- and P-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin Electron Cyclotron Resonance N_2O-Plasma Gate Dielectric
- Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N_2O-Plasma Gate Dielectrics
- Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory
- Digital Video Disc Recorder Using Second Harmonic Generation Green Laser