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Samsung Electronics Co. Ltd. Kyungki‐do Kor | 論文
- Control of Etch Slope during Etching of Pt in Ar /Cl_2 /O_2 Plasmas
- A New, Low-Thermal-Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured Hydrogen Silsesquioxane in Device
- A Novel and Low Thermal Budget Planarization Scheme for Pre-Metal Dielectric Using Electron-Beam Cured HSQ (Hydrogen Silsesquioxane) in STC (Stacked Capacitor) DRAM
- Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
- Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
- Optimization of Ring Type Electrode Process for High Density PRAM
- Optimization of Threshold Current Density for Compressive-Strained InGaAs/GaAs Quantum Well Lasers
- Electrical Transport Properties of Au-Doped Deoxyribonucleic Acid Molecules
- Generation of Local Magnetic Field by Nano Electro-Magnets
- New Large Angle Tilt Implanted Drain Structure: Surface Counter-Doped-Lightly Doped Drain for High Hot Carrier Reliability
- A New Drain Engineering Structure-SCD-LDD (Surface Counter Doped LDD) for Improved Hot Carrier Reliability
- A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
- Experimental and Theoretical Analyses of Cross-Write for In-Groove and On-Groove Recordings
- Wobble Addressing Method for Land and Groove Structured Optical Storage
- A Feasibility Study of Writing Compensation for Tangential Tilt
- Optical Storage System for 0.4 mm Substrate Media Using 405 nm Laser Diode and Numerical Aperture 0.60/0.65 Objective Lens
- Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
- A 0.24μm PRAM Cell Technology Using N-Doped GeSbTe Films(Phase Change RAM)(New Era of Nonvolatile Memories)
- Characteristics on the Gate Insulator of Metal Tip Field Emitter Arrays after Wet Etching Process
- Observations of Silicon Surfaces Exposed to Inductively Coupled CHF_3 and C_4F_8/H_2 Plasmas Using Fourier Transform Infrared Ellipsometry