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Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University | 論文
- Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
- Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy Using Tertiarybutylphosphine
- Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique
- Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
- Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE
- Embedded Nanowire Network Growth and Node Device Fabrication for GaAs-Based High-Density Hexagonal Binary Decision Diagram Quantum Circuits
- Toward Next Generation Electronics Based on Single Electron Devices
- Identification of Graphene Layer Numbers from Color Combination Contrast Image for Wide-Area Characterization
- Determination of Built-In Electric Field Strength in InP/n^+-InP Structures Using Photoellipsometry
- Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam Epitaxy
- Transport Characterization of Schottky In-Plane Gate Al_Ga_As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process
- Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
- Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties
- Boolean Logic Gates Utilizing GaAs Three-Branch Nanowire Junctions Controlled by Schottky Wrap Gates