スポンサーリンク
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University | 論文
- Structural and Optical Properties of 10nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate
- Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective Molecular Beam Epitaxial Growth of InGaAs Quantum Structure Arrays
- Ridge Uniformity Improvement Toward Growth of Sub-10nm InGaAs Ridge Quantum Wires by Selective MBE on Patterned InP Substrate
- In Situ X-Ray Photoelectron Spectroscopy Study of Etch Chemistry of Methane-Based Reactive Ion Beam Etching of InP Using N2
- Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy
- Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System
- In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs
- Large Schottky Barrier Heights ort Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process
- Enhancement of Schottky Barrier Heights on Indium Phosphide-Based Materials by In-Situ Electrochemical Process and Its Mechanism
- Experimental Studies of the Lubricating Oil Film between Two Rolling Rollers
- Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN
- Interface Properties of Metal/n-GaN Schottky Contacts
- GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits
- Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
- Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods
- Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
- Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces
- Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001)InP Substrates by Selective Molecular Beam Epitaxy
- A Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers
- Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE