Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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FUKUI T.
Research Center for Interface Quantum Electronics, Hokkaido University
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MOTOHISA J.
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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TERASAWA T.
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University
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NAKAJIMA F.
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University
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Motohisa J.
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Terasawa T.
Research Center For Interface Quantum Electronics (rciqe) Hokkaido University
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Fukui T.
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
関連論文
- Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
- Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE
- Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
- Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
- Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE