Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

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概要

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• We report on the growth of GaAs and GaAs/AlGaAs heterostructured hexagonal pillar structures using selective area (SA) metalorganic vapor phase epitaxy (MOVPE). By performing growth on SiO2-masked (1 1 1)B GaAs substrates with circular or hexagonal hole openings, extremely uniform array of hexagonal GaAs/AlGaAs pillars consisting {1 1 0} vertical facets with their diameter of order of 100 nm were obtained. Unexpectedly, strong intense light emission was observed for the room temperature photoluminescence measurement of the pillar arrays in triangular lattice, which is promising for the application to the photonic crystals to enhance the light extraction efficiency from the materials with high refractive index. Furthermore, it was also found that hexagonal pillars with size 60 nm and large aspect ratio (>100) by reducing the size of initial hole size of mask, opening a possibility to grow nanowires using epitaxial growth.

• Elsevier B.V.の論文

著者

• MOTOHISA J.

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• Motohisa J.

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Fukui T.

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

関連論文

• Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
• Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE
• Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
• Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
• Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

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