Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

スポンサーリンク

概要

• 論文の詳細を見る

• We report on a catalyst-free approach for the growth of semiconductor nanowires which is attracting interest as building blocks for nanoscale electronics and circuits. Our approach is based on selective-area MOVPE and nanowires are grown from small circular openings of SiO2 mask defined on (1 1 1)B-oriented substrates. At optimized conditions, extremely uniform array of GaAs and InGaAs nanowires with diameter of about 200nm was grown on GaAs and InP substrates, respectively. The nanowires have hexagonal cross-section and are perpendicular to the substrates, indicating that they are surrounded by (110) facet sidewalls. By reducing the mask opening size, nanowires with diameter down to 50nm and length more than 5μm were successfully formed. Photoluminescence and transmission electron microscopy characterization was also carried out.

• Elsevier B.V.の論文
• 2004-12-10

著者

• MOTOHISA J.

  Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

• Motohisa J.

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Fukui T.

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

関連論文

• Simulation and Observation of the Step Bunching Process Grown on GaAs (001) Vicinal Surface by Metalorganic Vapor Phase Epitaxy
• Fabrication of InP and InGaAs air-hole type Two-dimensional Photonic Crystals by Selective Area MOVPE
• Lateral Thickness Modulation of InGaAs/GaAs Structures by Selective Area MOVPE
• Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
• Growth of GaAs/AlGaAs hexagonal pillars on GaAs (1 1 1)B surfaces by selective-area MOVPE

スポンサーリンク