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Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation | 論文
- Crack Propagation and Mechanical Fracture in GaAs-on-Si
- Effect of Employing Positions of Thermal Cyclic Annealing and Strained-Layer Superlattice on Defect Reduction in GaAs-on-Si
- Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
- An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AlGaAs/InGaAs Pseudomorphic HEMT
- GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets (Special Issue on Ultra-High-Speed LSIs)
- Low Power Dissipation GaAs DCFL 2.5 Gbps 16-bit Multiplexer/Demultiplexer LSIs
- Lateral Integration of Zn and Al Dots with Nanometer-Scale Precision by Near Field Optical Chemical Vapor Deposition Using a Sharpened Optical Fiber Probe(Special Issue on Near-Field Optics and Its Applications)
- Fabrication of an Ultraviolet Light-Emitting Functional Probe of Sub-Micron Size by Photochemical Vapor Deposition
- Molecular Action Mode of Hippospongic Acid A, an Inhibitor of Gastrulation of Starfish Embryos
- A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
- Metalorganie Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyelopentadienyl-Berylium
- Ultra-High Throughput of GaAs and (AlGa)As Layers Grown by Molecular Beam Epitaxy (MBE) with a Specially Designed MBE System
- Analysis of High Power Amplifier Instability due to f_0/2Loop Oscillation
- High Efficiency AlGaAs/GaAs Power HBTs at a Low Supply Voltage for Digital Cellular Phones (Special Issue on Microwave and Millimeterwave High-power Devices)
- Preparation and Piezoelectric Property of Lead Titanate Thin Films for GHz-Band Resonators
- Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
- A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs (Special Section on Reliability)