Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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OTSUBO Mutsuyuki
Mitsubishi Electric Corporation, Optoelectronic and Microwave Devices Laboratory
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Mitsui Y
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ishikawa Takahide
Optoelectronic And Microwave Devices Laboratory Mitsubishi Electric Corporation
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MITSUI Yasuo
Semiconductor Laboratory, Mitsubishi Electric Corporation
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KOBIKI Michihiro
Semiconductor Laboratory, Mitsubishi Electric Corporation
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WATAZE Manabu
Semiconductor Laboratory, Mitsubishi Electric Corporation
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OTSUBO Mutsuyuki
Semiconductor Laboratory, Mitsubishi Electric Corporation
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ISHII Takashi
Semiconductor Laboratory, Mitsubishi Electric Corporation
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MITSUI Shigeru
Semiconductor Laboratory, Mitsubishi Electric Corporation
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Wataze Manabu
Semiconductor Laboratory Mitsubishi Electric Corporation
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Otsubo M
Mitsubishi Electric Corp. Itami‐shi Jpn
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Kobiki Michihiro
Semiconductor Laboratory Mitsubishi Electric Corporation
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- Flip-Chip Mounted GaAs Power FET with Improved Performances in X to Ku Band : B-1: GaAs IC
- A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs (Special Section on Reliability)
- Direct Efficiency and Power Calculation Method and Its Application to Low Voltage High Efflciency Power Amplifier
- The Ga-In-Sb Ternary Phase Diagram at Low Growth Temperature
- High Purity GaAs Crystals Grown by Liquid Phase Epitaxy