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Oki Electric Ind. Co. Ltd. Tokyo Jpn | 論文
- Formation of (Ba, Rb)BiO_3 Thin Films by Molecular Beam Epitaxy Using Distilled Ozone (Special Issue on High-Temperature Superconducting Electronics)
- Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
- Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
- Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
- Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
- Roles of Ions and Radicals in Silicon Oxide Etching
- In Situ Observation of Surface Morphology Evolution Corresponding to Reflection High-Energy Electron Diffraction Oscillation during Molecular Beam Epitaxy of Gallium Arsenide
- In Situ Observation of Monolayer Steps during Molecular Beam Epitaxy of Gallium Arsenide by Scanning Electron Microscopy
- Thermal Stability of Interconnect of TiN/Cu/TiN Multilayered Structure
- A New Mechanism of Failure in Silicon p^+/n Junction Induced by Diffusion Barrier Metals
- Fabrication of Rectangular Holes along 2×4 Unit Cells on GaAs(001) Reconstructed Surface with a Scanning Tunneling Microscope
- Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy
- Scanning Tunneling Microscopy of (NH_4)_2S_x-Treated GaAs Surfaces Annealed in Vacuum
- Measurement of the Virtual Mass of a Body Using the Second Harmonic Resonance of a Tube
- A New Method for Atomic-Layer-Controlled Molecular Beam Epitaxy of GaAs Exploiting the Desorption of the Excess Ga Atoms
- The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
- Emission Profile Dependence of Microcavity Light Emitting Diodes
- Thermal Quenching of the Photoluminescence of InGaAs/GaAs Single Quantum Wells Adjacent to a Selectively Oxidized AlAs Layer
- Tandem Enzymatic Resolution Yielding L-α-Aminoalkanedioic Acid ω-Esters
- Properties of Porous PZT Ceramics for Hydorophone Applications : P: PIEZOELECTRICS