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Ntt Electrical Communications Laboratories | 論文
- Nb-Oxide-Pb Tunnel Junctions Fabricated Using CF_4 Cleaning Process. (III) Preparation of Planar dc SQUID
- High-Speed Avalanche Photodiode with a Neutral Absorption Layer for 1.55 μm Wavelength
- Small Nb/Al-Oxide/Nb Josephson Junction Fabrication Using Lift-Off Processes
- Ultrasonic Treatment Applied to High Quality Lift-Off Technique : High Power Ultrasonics
- MBE Growth of Ga_In_xAs Alloy on Si Substrate
- The Importance of the Electric Interaction for Stabilizing the Antiferroelectric Smectic Liquid-Crystalline Phase
- A Boundary Layer Model for the MOCVD Process in a Vertical Cylinder Reactor
- Growth of ZnSe Films on In_xGa_As Substrate by Metalorganic Vapor Phase Epitaxy
- Growth of GaAs/InAs Antidot Structure by Solid-Source MBE
- Growth of GaAs/InAs Anti-Dot Structure by Solid Source MBE
- Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy
- In Situ Optical Observation of Surface Kinetics during GaAs Metalorganic Chemical Vapor Deposition
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Rare Earth Impurity Analysis for Fluoride Glass Optical Fiber by Photoluminescence Measurement
- Macroscopic Axial Dopant Distribution in Czochralski Silicon Crystals Grown in a Vertical Magnetic Field
- Preparation of a High-T_c Y-Ba-Cu-O Superconductor Using Colloidal Methods
- Ideally Ordered Anodic Porous Alumina Mask Prepared by Imprinting of Vacuum-Evaporated Al on Si : Instrumentation, Measurement, and Fabrication Technology