A Boundary Layer Model for the MOCVD Process in a Vertical Cylinder Reactor

スポンサーリンク

概要

• 論文の詳細を見る

• The transport process in metalorganic chemical vapor deposition (MOCVD) is investigated for a vertical reactor where two kinds of reactants are mixed just above the horizontally-attached substrate. A boundary layer model is developed and the epitaxial growth of the compound semiconductor is described. The model predicts that the growth rate is a function of reactant partial pressure, boundary layer thickness and the degree of mixing. It also predicts that uniformity in thickness is obtained by controling the homogeneity of mixing. Results of experimental studies on ZnSe epitaxial growth rate agree well with the calculated growth rate.

• 社団法人応用物理学会の論文
• 1987-09-20

著者

• SHIBATA Noriyoshi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• ZEMBUTSU Sakae

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Zembutsu Sakae

  Ntt Electrical Communications Laboratories

• Shibata Noriyoshi

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

関連論文

• High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited Condition
• A Boundary Layer Model for the MOCVD Process in a Vertical Cylinder Reactor
• Growth of ZnSe Films on In_xGa_As Substrate by Metalorganic Vapor Phase Epitaxy
• Optical Third-Harmonic Generation from Highly Oriented Polydiacetylene Thin Films Deposited by Vacuum Deposition

スポンサーリンク