Growth of ZnSe Films on In_xGa_<1-x>As Substrate by Metalorganic Vapor Phase Epitaxy

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概要

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• This letter discusses ZnSe epitaxial layers grown on lattice-matched In_xGa_<1-x>As (x=0.032) substrates by metalorganic vapor phase epitaxy. These films emit a stronger near-bandedge photoluminescence at room temperature than ZnSe layers on GaAs substrates do when the film thickness is less than 1 μn. However, self-activated emission intensity, which has been reduced remarkably by decreasing the impurities piled up near the substrate surface, is independent of the lattice parameter of the substrate.

• 社団法人応用物理学会の論文
• 1986-04-20

著者

• Miyashita T

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• SHIBATA Noriyoshi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• ZEMBUTSU Sakae

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Zembutsu Sakae

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• Zembutsu Sakae

  Ntt Electrical Communications Laboratories

• MIYASHITA Tadashi

  NTT Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation

• Shibata Noriyoshi

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

• Miyashita Tadashi

  Ntt Electrical Communications Laboratories Nippon Telegraph And Telephone Corporation

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• Optical Third-Harmonic Generation from Highly Oriented Polydiacetylene Thin Films Deposited by Vacuum Deposition

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