MBE Growth of Ga_<1-x>In_xAs Alloy on Si Substrate

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概要

• 論文の詳細を見る

• Ga_<1-x>In_xAs ternary alloy layers were successfully grown on Si substrates by molecular beam epitaxy for the first time. Layer characterization by RHEED, X-ray diffraction and room temperature photoluminescence reveal that single domain Ga_<1-x>In_xAs alloys which cover the 1.2〜1.6 μm wavelength region can be grown by a two-step growth method.

• 社団法人応用物理学会の論文
• 1987-02-20

著者

• Oe Kunishige

  Ntt Electrical Communications Laboratories

• TAKEUCHI Hiroaki

  NTT Electrical Communications Laboratories

• Takeuchi H

  Kanagawa Univ. Kanagawa Jpn

関連論文

• MBE Growth of Ga_In_xAs Alloy on Si Substrate
• An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate

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