An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• A dislocation-free GaAs epitaxial layer without propagating dislocations from a substrate or misfit dislocations is developed on an indium-doped semi-insulating GaAs substrate by molecular beam epitaxy (MBE). The epitaxial layer is doped with indium to reduce lattice mismatch between the layer and substrate. Photoluminescence measurements confirm that the indium-doped dislocation-free GaAs epitaxial layer has good photoluminescence efficiency. This dislocation-free GaAs epitaxial layer promises to play an important role in achieving a GaAs/AlGaAs optoelectric integrated circuit (OEIC).

• 社団法人応用物理学会の論文
• 1986-04-20

著者

• Oe Kunishige

  Ntt Electrical Communications Laboratories

• TAKEUCHI Hiroaki

  NTT Electrical Communications Laboratories

• SHINOHARA Masanori

  NTT Electrical Communications Laboratories

関連論文

• MBE Growth of Ga_In_xAs Alloy on Si Substrate
• An In-Doped Dislocation-Free GaAs Layer Grown by MBE on In-Doped GaAs Substrate

スポンサーリンク