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New Industry Creation Hatchery Center Tohoku University | 論文
- Kinetic analysis of reactive oxygen species generated by the in vitro reconstituted NADPH oxidase and xanthine oxidase systems
- Synthesis and Optical Property Analysis of Novel Anisotropic Light Diffusing Film
- Evaluation of New Amorphous Hydrocarbon Film for Copper Barrier Dielectric Film in Low-$k$ Copper Metallization
- Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors
- Ferroelectric Sr2(Ta1-x, Nbx)2O7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
- High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma
- A Study on Very High Performance Novel Balanced Fully Depleted Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Field-Effect Transistors on Si(110) Using Accumulation-Mode Device Structure for Radio-Frequency Analog Circuits
- Effects of Ion-Bombardment-Assist and High Temperature on Growth of Zinc Oxide Films by Microwave Excited High Density Plasma Enhanced Metal Organic Chemical Vapor Deposition
- A Low-Dielectric-Constant Sr2(Ta1-x,Nbx)2O7 Thin Film Controlling the Crystal Orientation on an IrO2 Substrate for One-Transistor-Type Ferroelectric Memory Device
- A Technology for Reducing Flicker Noise for ULSI Applications
- Relationship between Sr2(Ta1-x,Nbx)2O7 Crystal Phase and RF-Sputtering Plasma Condition for Metal–Ferroelectric–Insulator–Si Structure Device Formation
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced Metal Organic Chemical Vapor Deposition Employing Microwave Excited High Density Plasma
- Technology of Ferroelectric Thin-Film Formation with Large Coercive Field on Amorphous SiO2 by Ion-Bombardment-Assisted Sputtering and Oxygen Radical Treatment for Future Scaling Down of Ferroelectric Gate Field-Effect Transistor Memory Device
- Development of Microwave-Excited Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2
- Fabrication of Pt/Sr2(Ta1-x,Nbx)2O7/IrO2/SiO2/Si Device with Large Memory Window and Metal–Ferroelectric–Metal–Insulator–Si Field-Effect Transistor
- Microcrystalline/Amorphous Thin Si Films Deposition by a Newly Developed Dual Injection System Employing Hydrogen Plasma and Silicon Radicals at Low Temperature (300 °C) Chemical Vapor Deposition Process
- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
- Large-Scale Electronic Structure Calculation on Blue Phosphor BaMgAl10O17:Eu2+ Using Tight-Binding Quantum Chemistry Method Implemented for Rare-Earth Elements
- Theoretical Simulation of Dielectric Breakdown by Molecular Dynamics and Tight-Binding Quantum Chemistry Methods
- Theoretical Investigation on Electrical and Electronic Properties of Carbon Materials