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NTT System Electronics Laboratories | 論文
- Effects of RE2O3 (RE=Tm, Sc, Yb) addition on the superconducting properties of ErBa2Cu3Oy
- Fabrication and characterization of (Nd,Eu,Gd)Ba2Cu3Oy films by metal-organic deposition using TFA-containing solutions without introduction of water vapor
- Growth of GdBa2Cu3Oy films prepared by BaF2 process without water vapor
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- Crucial Role of Extremely Thin AlSb Barrier Layers in InAs/AlSb/GaSb/AlSb/InAs Resonant Interband Tunneling Diodes
- Dependence of Resonant Interband Tunneling Current on Barrier and Well Width in InAs/AlSb/GaSb/AlSb/InAs Double-Barrier Structures
- Empirical Interatomic Potentials for Nitride Compound Semiconductors
- A Sparse Memory Access Architecture for Digital Neural Network LSIs (Special Issue on New Concept Device and Novel Architecture LSIs)
- Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction
- Cross-Contamination from Etching Materials in Reactive Ion Etcher
- An Analytical Toggle Frequency Expression for Source-Coupled FET Logic(SCFL)Frequency Dividers
- High-Quality Low-Dose SIMOX Wafers (Special Issue on SOI Devices and Their Process Technologies)
- Reduction of the Number of Parameters for the Simulation of Impurity Diffusion
- Compact Monolithic Frequency Converters for a V-Band Transmitter/Receiver (Special Issue on Millimeter-wave Short-range Application Systems Technology)
- Dual-Frequency Matching Technique and Its Application to an Octave-Band (30-60 GHz) MMIC Amplifier
- Negative Conductance Properties in Extremely Thin Silicon-on-Insulator (SOI) Insulated-Gate pn-Junction Devices (SOI Surface Tunnel Transistors)
- A Balanced-Mesh Clock Routing Technique for Performance Improvement
- Crossover Energy Where Cathodoluminescence Becomes Comparable to Electroluminescence in p-Type GaAs Observed by Injecting Tunneling Electrons
- Improvement of Sputtering Target Utilization Using Dynamic Plasma Processing