Reduction of the Number of Parameters for the Simulation of Impurity Diffusion

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概要

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• This paper shows that the binding energy and the rate constants for the kick-out reaction are not essential parameters for the simulation of impurity diffusion, which leads to a reduction of the number of parameters. We have found that transient enhanced B diffusion will be underestimated due to the self-interstitial undersaturation if a large binding energy value is assumed. However, the simulated results are fairly insensitive to the variations of the energy values as long as these values are small enough. In addition, it is concluded that the kick-out reaction is fast enough to achieve the local equilibrium even in a short time at a low temperature. In the simulation, as long as the values of the rate constant of the kick-out reaction are large enough, the local equilibrium is found to be satisfactorily achieved, and the simulated results are almost totally independent of the parameter values.

• 社団法人応用物理学会の論文
• 1997-12-15

著者

• Uematsu Masashi

  Ntt System Electronics Laboratories

関連論文

• Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation
• Reduction of the Number of Parameters for the Simulation of Impurity Diffusion
• Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon

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