Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon

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概要

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• Sb diffusion profiles in heavily As-doped Si have been simulated using just two essential parameters for Sb diffusion. These parameters correspond to the diffusion of dopant species that contribute to Sb diffusion, and they are the effective diffusivities of the vacancy mechanism via single and double negatively charged vacancies. We discuss which diffusing species affect diffusion profiles based on the integrated diffusion model.

• 社団法人応用物理学会の論文
• 1998-04-15

著者

• Uematsu Masashi

  Ntt System Electronics Laboratories

関連論文

• Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation
• Reduction of the Number of Parameters for the Simulation of Impurity Diffusion
• Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon

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