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NTT System Electronics Laboratories | 論文
- Radio-Frequency Silicon LSI's for Personal Communications (Special Issue on Circuit Technologies for Memory and Analog LSIs)
- Effects of Simulated Annealing in the Resonant-Tunneling Resistive-Fuse Network for Early Vision (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- A Co-Evaluation of the Architectures and the CAD System for Speed-Oriented FPGAs (Special Section on VLSI Design and CAD Algorithms)
- Degradation Modes of InGaAs p-n Diodes Operated at Forward Biases
- Sub-Quarter Micron Logic-Gate-Pattern Fabrication Using Halftone Phase-Shifting Masks
- A Theoretical Inverstigation of Stable Lattice Sites for In Adatoms on GaAs(001)-(2×4) Surface
- Current-Sensed SRAM Techniques for Megabit-Class Integration : Progress in Operating Frequency by Using Hidden Writing-Recovery Architecture
- Precise Control and Resizing of Polysilicon Gate Length by Hard-Mask Etching
- Simulation of Antimony Diffusion in Heavily Arsenic-Doped Silicon
- Simulation of Clustering and Pile-Up during Post-Implantation Annealing of Phosphorus in Silicon
- 24aRF-5 第42回国際物理オリンピック・タイ大会報告(24aRF 物理教育,領域13(物理教育,物理学史,環境物理))
- Self-aligned TiN Formation by N_2 Plasma Bias Treatment of TiSi_2 Deposited by Selective Chemical Vapor Deposition
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- A Clock Distribution Technique with an Automatic Skew Compensation Circuit
- Low-temperature tunnelling-electron luminescence microscopy using tip collection
- Monolithic 2GHz and 4-6GHz Low Noise Amplifiers Fabricated on a SIMOX Wafer
- WSiN Diffusion Barrier Formed by ECR Plasma Nitridation for Copper Damascene Interconnection
- Improved Diffusion Barrier Capability of Thin WSiN Film by RF Bias Application during ECR Plasma Nitridation
- A Switched Virtual-GND Level Technique for Fast and Low Power SRAM's
- Synthesis of Amino Acids from N_2, H_2O Vapor and CO_2 Gas Mixture by Synchrotron Radiation Induced Photochemical Reactions at Atmospheric Pressure