Improved Diffusion Barrier Capability of Thin WSiN Film by RF Bias Application during ECR Plasma Nitridation

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Kyuragi H.

  Ntt System Electronics Laboratories

• HIRATA A.

  NTT System Electronics Laboratories

• MACHIDA K.

  NTT System Electronics Laboratories

• MAEYAMA S.

  NTT Basic Research Laboratories

• WATANABE Y.

  NTT Basic Research Laboratories

関連論文

• WSiN Diffusion Barrier Formed by ECR Plasma Nitridation for Copper Damascene Interconnection
• Improved Diffusion Barrier Capability of Thin WSiN Film by RF Bias Application during ECR Plasma Nitridation
• Arrangement of Catalyst Islands at Surface Atomic Steps toward Position Control of Nanowires

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