Self-aligned TiN Formation by N_2 Plasma Bias Treatment of TiSi_2 Deposited by Selective Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• The titanium nitride (TiN) formation technology described here uses nitrogen plasma bias treatment to form self-aligned TiN only on the diffused layer from titanium silicide (TiSi_2) prepared by selective chemical vapor deposition (CVD). The nitriding was performed using magnetron sputtering equipment with an rf plasma source. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and etching in 1% HF were used to characterize the samples. The contacts fabricated with the Al-2%Si/TiN/TiSi_2/Si barrier technology exhibit low resistivities of about 10^<-7>Ω・cm^2. No excessive leakage of the 0.2-μm shallow junctions was observed even after thermally stressing the samples at 500℃ for 30 min.

• 社団法人応用物理学会の論文
• 1997-02-15

著者

• Saito Kunio

  Ntt System Electronics Laboratories

• Kamoshida K

  Ntt System Electronics Laboratories

• KAMOSHIDA Kazuyoshi

  NTT System Electronics Laboratories

関連論文

• Self-aligned TiN Formation by N_2 Plasma Bias Treatment of TiSi_2 Deposited by Selective Chemical Vapor Deposition

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