Radio-Frequency Silicon LSI's for Personal Communications (Special Issue on Circuit Technologies for Memory and Analog LSIs)

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概要

• 論文の詳細を見る

• RF integration, until recently the integration of active devices in conventional architectures suitable for discrete-component circuits, is now turning into full-integration based on new architectures developed specifically for an LSI technology. This paper reviews some of the key existing and emerging circuit techniques and discusses the serious problem of crosstalk. In order to develop miniature and low power RF transceivers, direct-conversion and monolithic VCO's will be further studied. Silicon bipolar technology will still be playing major role beyond the year 2,000, and CMOS will also be used in certain applications.

• 社団法人電子情報通信学会の論文
• 1997-04-25

著者

• TSUKAHARA Tsuneo

  NTT System Electronics Laboratories

• ISHIKAWA Masayuki

  NTT System Electronics Laboratories

関連論文

• Low dc Power Si-MOSFET L- and C-Band Low Noise Amplifiers Fabricated by SIMOX Technology (Special Issue on Ultra-High-Speed IC and LSI Technology)
• A 2.7-V Quasi-Microwave Si-Bipolar Quadrature Modulator without Tuning (Special Section on Analog Circuit Techniques for System-on-Chip Integration)
• Radio-Frequency Silicon LSI's for Personal Communications (Special Issue on Circuit Technologies for Memory and Analog LSIs)

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