Crossover Energy Where Cathodoluminescence Becomes Comparable to Electroluminescence in p-Type GaAs Observed by Injecting Tunneling Electrons

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概要

• 論文の詳細を見る

• Using a conductive and transparent tip, which can bear higher bias voltages than a conventional scanning tunneling microscopy (STM) metal tip, for injecting tunneling electrons, we successfully obtained the dependence of luminescence intensity on excitation energy up to 7 eV for p-type GaAs. We found a threshold energy at 4.9 eV above which the luminescence intensity substantially increases. The increase is attributable to cathodoluminescence due to the recombination of electrons and holes created by impact ionization (I.I.). The present result experimentally supports the simulation result predicting that there is no clear-cut transition, but a soft crossover, in the energy dependence of I.I. rate.

• 社団法人応用物理学会の論文
• 1999-01-15

著者

• Sasaki Susumu

  Ntt System Electronics Laboratories

• MURASHITA Tooru

  NTT System Electronics Laboratories

• Murashita T

  Ntt System Electronics Laboratories

関連論文

• Crossover Energy Where Cathodoluminescence Becomes Comparable to Electroluminescence in p-Type GaAs Observed by Injecting Tunneling Electrons
• Low-temperature tunnelling-electron luminescence microscopy using tip collection

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